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    Home / News / Technology News / Your next smartphone would last longer, thanks to new transistor
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    Your next smartphone would last longer, thanks to new transistor
    Revolutionary transistor promises durable electronics

    Your next smartphone would last longer, thanks to new transistor

    By Akash Pandey
    Sep 07, 2024
    04:55 pm

    What's the story

    A groundbreaking transistor has been developed, demonstrating unprecedented durability in preliminary tests.

    This device, integral to modern electronics for data storage and processing, could significantly enhance everyday gadgets.

    The unique blend of speed, compactness, and resistance to wear makes it a potential game-changer for consumer electronics like smartphones and laptops.

    Efficiency boost

    Transistor's impact on data centers and cloud storage

    The innovative transistor could also revolutionize data centers that house our cloud-stored information.

    According to the international research team behind this study, if the technology can be scaled up, it could make our machines and systems significantly faster, more efficient, and robust.

    "This is one of the first, and perhaps most dramatic, examples of how very basic science has led to something that could have a major impact on applications," stated physicist Pablo Jarillo-Herrero from MIT.

    Material innovation

    Innovative design of the new transistor

    The transistor is constructed from a newly invented ultrathin ferroelectric material based on boron nitride, with positive and negative charges on different levels.

    The design involves two layers of this material that shift slightly when electricity is applied, altering the arrangement of boron and nitrogen atoms.

    This unique design makes these transistors incredibly fast and thin, potentially leading to more compact and efficient electronics.

    Durability advantage

    Durability surpasses current flash memory devices

    The slight shift in layers also changes the properties of the material, resulting in minimal wear or tear.

    The transistor can toggle on and off at least 100 billion times without showing signs of wear, making it more durable than current flash memory storage devices.

    "Each time you write and erase a flash memory, you get some degradation," says physicist Raymond Ashoori from MIT.

    Future prospects

    Challenges and potential applications

    Despite the promising results, researchers acknowledge that there's a long way to go before these transistors can be used in real devices.

    The team is optimistic about future applications, including potential use in other physics fields like using light instead of electricity to trigger layer shifts.

    "When I think of my whole career in physics, this is the work that I think 10 to 20 years from now could change the world," says Ashoori.

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